GaAs Crystal Customized

Element Symbol：GaAs
CAS：1303-00-0
Model：Sup-GaAs
Shape：Wafer, Disc or ingot
Thickness：[N/A]
Dimension：[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

Gallium arsenide (GaAs) is an important semiconductor material composed of gallium and arsenic. It exhibits excellent electronic and optoelectronic properties, particularly in high-frequency and high-power applications. The bandgap of GaAs is approximately 1.43 eV, making it widely used in photodetectors, lasers, solar cells, and microwave devices. Compared to silicon, GaAs has higher electron mobility and a smaller energy bandgap, making it suitable for high-speed communications and optoelectronic devices.

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

Main Property Parameters
Single Crystal	Doping	Conductivity Type		Carrier Concentration cm-3	Dislocation Density cm-2	Growth Method	Standard Substrate
GaAs	None	Si		/	<5×105	LEC HB Dia3″	Dia3″×0.5 Dia2″×0.5
	Si	N		>5×1017
	Cr	Si		/
	Fe	N		~2×1018
	Zn	P		>5×1017
Dimension（mm）			25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm According to customer needs, substrates with special orientation and size can be customized.
Surface Roughness			Surface roughness(Ra):<=5A Atomic Particle Microscopy (AFM) test report can be provided.
Polishing			One side or two sides
Packaging			Clean bag (100), Super clean room (1000)