High-Purity Anhydrous Gallium Fluoride GaF3 Powder Customized

Chemical Formula: GaF3

CAS: 7783-51-9

Model: Sup-GaF3

Purity: 99.99%-99.999% (Customized)

Description: Discover our High-Purity Anhydrous Gallium Fluoride (GaF3) powder, customized for your specific applications in the semiconductor and materials science industries. Known for its excellent electrical insulation properties and thermal stability, GaF3 is ideal for use as a dopant in semiconductor materials, as well as in optoelectronic devices like lasers and photodetectors. Our high-purity GaF3 powder ensures optimal performance in high-frequency and high-temperature applications. Explore how our customized solutions can enhance your research and development efforts in advanced electronic materials.

Product Description

Chemical Name: Gallium Fluoride

Chemical Formula: GaF3

CAS: 7783-51-9

Purity: 99.99%-99.999% (Customized)

Specifications: -60 mesh powder.

High-Purity Anhydrous Gallium Fluoride (GaF3) is an important inorganic compound widely used in materials science and the semiconductor industry. As a fluoride, GaF3 exhibits excellent electrical insulation properties and thermal stability, making it suitable for various high-performance materials and electronic devices.

Physical and Chemical Properties

- Appearance: High-purity anhydrous gallium fluoride typically appears as white or colorless crystals, making it easy to handle and store.

- Density: GaF3 has a density of approximately 4.0 g/cm³, indicating its relatively high mass.

- Melting Point: It has a high melting point, suitable for use under elevated temperature conditions, ensuring material stability.

- Chemical Properties: GaF3 demonstrates good chemical stability, making it suitable for a variety of application environments.

Applications

The main applications of high-purity anhydrous gallium fluoride include:

1. Dopant: Used as a dopant in certain semiconductor materials to improve conductivity and material performance.

2. Optoelectronic Devices: Employed in the manufacture of photodetectors and lasers, enhancing device efficiency and response speed.

3. Insulation Materials: Due to its excellent electrical insulation properties, GaF3 can be used in high-frequency and high-temperature electronic applications as insulation layers.

4. Catalysts: In some chemical reactions, GaF3 can act as a catalyst, facilitating the process.

Summary

High-purity anhydrous gallium fluoride, with its superior physical and chemical properties, shows significant application potential in materials science and the semiconductor industry. As technology continues to advance, it will play an important role in the development of new electronic devices and high-performance materials.

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