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Lithium aluminate LiAlO2 single crystal substrates Customized

Element Symbol:LiAlO2
CAS:12057-74-8
Model:Sup-LiAlO2
Shape:Wafer, Disc or ingot
Thickness:[N/A]
Dimension:[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

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Lithium aluminate LiAlO2 single crystal has a very good lattice match to GaN, and thus becomes a potential III-V nitride film substrate material.

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

Lattice constant

a=5.17 A    c=6.26 A

Melting point(℃)

1900

Density

2.62(g/cm3)

Hardness

7.5(mohs)

Mismatch rate with GaN <001>

1.4%

Size

10x3,10x5,10x10,15x15,,20x15,20x20,

Ф15,Ф20,Ф1″,Ф2″,Ф2.6″

Thickness

0.5mm,1.0mm

Polishing

Single-sided or double-sided

Crystal orientation

<100>  <001>

Crystal plane orientation accuracy

±0.5°

Edge orientation accuracy

2°(Special requirements can reach within 1°)

Bevel wafer

According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed

Ra

≤5Å(5µm×5µm)

Package

Class 100 clean bag, Class 1000 super clean room


Physical Properties:

- Melting Point: Approximately 1870°C, demonstrating good thermal stability.

- Electrical Conductivity: LiAlO2 is an insulating material with low electrical conductivity.

- Optical Properties: It possesses good optical transparency, making it suitable for optoelectronic applications.

Applications:

1. Ceramic Materials: Used in the manufacture of high-performance ceramics, providing excellent mechanical strength and heat resistance.

2. Optoelectronic Devices: Serves as a window material in lasers and optical windows.

3. Lithium-Ion Batteries: Acts as an additive in battery materials, enhancing ionic conductivity and safety.

4. Catalyst Support: Functions as a support for catalysts in chemical reactions, improving their efficiency.

5. Semiconductor Applications: Used as a substrate for certain semiconductor materials, facilitating thin film growth.

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