Si3N4 Ceramic Substrate

Element Symbol：Si3N4
Model：Sup-Si3N4
Shape：Sheet
Description: Explore Si₃3N4 (silicon nitride) ceramic substrates, known for their high strength, thermal stability, and excellent electrical insulation. Ideal for semiconductor devices, microelectronic packaging, and MEMS components, these substrates offer reliable performance in high-temperature environments and resistance to chemical corrosion.

Si3N4 (silicon nitride) ceramic substrates are advanced materials known for their exceptional mechanical, thermal, and electrical properties. Composed primarily of silicon nitride, these substrates exhibit high strength, excellent thermal stability, and low thermal expansion, making them suitable for various applications in electronics and semiconductors.

Applications:

1. Semiconductor Devices: Used as substrates for high-temperature and high-frequency applications.

2. Microelectronic Packaging: Provides reliable insulation and thermal management for semiconductor devices.

3. MEMS Components: Utilized in micro-electromechanical systems for sensors and actuators.

4. Heat Sinks: Serves as a heat sink material in high-power electronic devices.

5. Thermal Barrier Layers: Effectively protects sensitive components from high-temperature exposure.

Molecular formula	Si3N4
Relative molecular mass	140.28
Color	Gray, gray black
Crystal system	hexahedral
Preparation method	heat pressing
Relative density	99.5%
Density	3.2+/-0.02 g/cm3
Moh's hardness	9~9.5
Melting point	1900℃ , Usually decomposed at 1900℃ at normal pressure
Thermal expansivity	2.8~3.2×10-6/℃ (20~1000℃)
Heat capacity	0.71J/(g·K)
Thermal conductivity	15~ 20W/(m·K)
Modulus of elasticity	300~320 GPa
Fracture toughness	6.0~7.0 MPa.m
Flexural strength	650~750 Mpa
Webpark Module	10~12
Solubility	Insoluble in water.Solute in hydrofluoric acid
oxidizing temperature	The temperature of starting oxidation in the air is 1300 to 1400℃