SiC Crystal Silicon Carbide Customized

Element Symbol：SiC
CAS：409-21-2
Model：Sup-SiC
Shape：Wafer, Disc or ingot
Thickness：[N/A]
Dimension：[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

Silicon Carbide (SiC) is an important semiconductor material widely used in high-temperature, high-power, and high-frequency electronic devices. It is composed of silicon and carbon elements and possesses very high thermal conductivity and chemical stability. Due to its excellent electrical properties and wear resistance, silicon carbide is extensively applied in optoelectronics, power electronics, automotive electronics, and energy sectors.

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

Main performance parameters
Growth method	Seed crystal sublimation method, PVT (Physical gas phase transfer)
Crystal structure	Hexagon
Lattice constant	a=3.08 Å ,c=15.08 Å
Marshalling sequence	ABCACB(6H), ABCBABCB(4H)
Band gap	2.93 eV
Mohs hardness	9.2
Heat conductivity @300K	5 W/ cm.k
Dielectric constant	e(11)=e(22)=9.66 e(33)=10.33
Conductor type	I		N
Dopant	Undoped	Vanadium	Nitrogen
Resistivity （ohm.cm）	˃ 1*107	˃ 1*105	0.01-0.2
Dimension	5x5，10x10，15x15，20x20，
	Ø50.8, Ø100 mm, Ø150mm等
Thickness	0.33/0.35/0.5mm, Special direction and size of the substrate can be customized according to the customer need
Polishing	One side or two sides
Orientation	<0001>or <0001> off 4.0º
Orientation tolerance	±0.5°
Flat orientation tolerance	2°（special requirements 1°）
Roughness	≤5Å（5µm×5µm）
Packing	Class 100 clean bag, Class 1000 clean room