High Purity Tungsten Disilicide WSi2 Ceramic Sputtering Target Customized

Element Symbol：WSi2
CAS：[N/A]
Model：Sup-WSi2
Purity：4N
Shape：Round,Square
Thickness：[N/A]
Dimension：[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

Description: Tungsten Disilicide (WSi₂) targets are advanced materials commonly used in microelectronics and thin-film deposition processes. With a melting point of approximately 2165°C and a density of 9.3 g/cm³, WSi₂ exhibits excellent oxidation resistance and high electrical conductivity, making it ideal for contact materials in semiconductor devices.

Tungsten Disilicide WSi2 Target Product Details

Tungsten disilicide, also known as silicide tungsten, has a black-gray color, a melting point of 2165°C, and a density of 9.3 g/cm³. It exhibits good oxidation resistance, is soluble in aqua regia but insoluble in water. It can react violently with many substances, including strong acids, fluorine, oxidizers, and halogen compounds.

WSi₂ is commonly used in microelectronics as a contact material, with a resistivity of 60-80 μΩ·cm. Additionally, it is often used in shunts on polysilicon wires to enhance the conductivity and signal speed of the polysilicon lines.

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

ITEM	Chemical composition
Element	W	C	P	Fe	S	Si
Content(wt%)	76.22	0.01	0.001	0.12	0.004	Balance

Tungsten Disilicide WSi2 Physical and Chemical Properties

- Appearance: Tungsten disilicide targets typically appear as gray or black solids.

- Melting Point: The melting point of WSi₂ is approximately 2165°C, making it suitable for high-temperature environments.

- Density: Its density is about 9.3 g/cm³, indicating good mechanical properties.

- Conductivity: WSi₂ has excellent electrical conductivity, making it suitable for electrode and interconnect applications.

Applications of Tungsten Disilicide WSi2

The main applications of tungsten disilicide targets include:

1. Electrode Materials:

- Commonly used in the electrodes of semiconductor devices like MOSFETs to enhance electrical performance and thermal stability.

2. Thin Film Deposition:

- Used as a target in Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) processes to produce high-quality metal films.

3. High-Temperature Devices:

- Suitable for high-temperature sensors and power electronic devices, maintaining stability in extreme environments.

4. Interconnect Materials:

- Utilized in metal interconnects to reduce power consumption during current flow and improve device performance.

Summary

With its superior physical and chemical properties, tungsten disilicide targets demonstrate significant application potential in the semiconductor and microelectronics fields, making them essential materials for the manufacture of high-performance electronic devices.

WSi2 target.png