LaAlO3 Crystal Substrates Customized

Element Symbol：LaAlO3
CAS：12057-25-5
Model：Sup-LaAlO3
Shape：Wafer, Disc or ingot
Thickness：[N/A]
Dimension：[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

Lanthanum aluminate (LaAlO₃) single crystals are important industrial materials for large-sized high-temperature superconducting film substrates. They can be grown using the floating zone method, yielding single crystals and substrates with diameters of 2 inches or larger. LaAlO₃ exhibits good lattice matching with high-temperature superconductors such as YBa₂Cu₃O₇, has a low dielectric constant, and low microwave loss, making it suitable for the fabrication of high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters used in long-distance communication). This material has significant practical and potential application prospects.

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

Main Properties:

- Thermal Stability: LaAlO₃ exhibits good thermal stability, maintaining its structure and performance in high-temperature environments.

- Electrical Insulation: This material demonstrates outstanding electrical insulation properties, making it ideal for high-frequency and high-temperature applications.

Applications:

1. Substrate Material: LaAlO₃ is commonly used as a substrate for high-temperature superconductors and other oxide semiconductors, facilitating the growth of high-quality thin films.

2. Optoelectronic Devices: It serves as an excellent substrate material in lasers and photodetectors.

3. Catalyst Support: LaAlO₃ can act as a catalyst support in various catalytic reactions, enhancing reaction efficiency.

Main performance parameters
Crystal structure	M6（normal temperature）	M3（>435℃）
Lattice constant	M6 a=5.357A c=13.22 A	M3 a=3.821 A
Melting point（℃）	2080
Density	6.52（g/cm3）
Hardness	6-6.5（mohs）
Thermal expansion coefficient	9.4x10-6/℃
Dielectric constants	ε=21
Secant loss（10ghz)	～3×10-4@300k,～0.6×10-4@77k
Color and appearance	To anneal and conditions differ from brown to brownish The polished substrate has natural twin domains
Chemical stability	Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4
Characteristics	For microwave electron device
Growth method	Czochralski method
Size	10x3，10x5，10x10，15x15，，20x15，20x20，
	Ф15,Ф20，Ф1″，Ф2″,Ф2.6″
Thickness	0.5mm，1.0mm
Polishing	Single-sided or double-sided
Crystal orientation	＜100＞＜110＞＜111＞
Crystal plane orientation accuracy	±0.5°
Edge orientation accuracy	2°（Special requirements can reach within 1°）
Bevel wafer	According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed
Ra:	≤5Å（5µm×5µm）
Package	Class 100 clean bag, Class 1000 super clean room