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MgAl2O4 Crystal Substrates Customized

Element Symbol:MgAl2O4
CAS:12004-41-6
Model:Sup-MgAl2O4
Shape:Wafer, Disc or ingot
Thickness:[N/A]
Dimension:[N/A]
(Note: Purity, shape, thickness, and dimensions can all be customized)

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Magnesium aluminate (MgAl2O4) can be used as the substrate substrate of III-V nitride device thin film, and is also widely used in acoustic wave and microwave devices and fast IC epitaxial substrates. In addition, it has a good lattice matching with epitaxial silicon thin layer. The self-doping of aluminum atoms in the epitaxial silicon thin layer is small, the thermal stability is good, and the expansion coefficient of silicon is relatively close, the hardness is small, the processing performance is better, etc., so it can be used as a high-quality insulating lining for ultra-high-speed large-scale integrated circuits One of the bottom materials. 

At present, we can provide twin-free, crystal-domain-free, and ultra-smooth high-quality substrate substrates with a maximum diameter of 2 inches (FWHM<50 arcsec, roughness Ra<0.5 nm). 

Note: Purity, shape, thickness, and dimensions can all be customized,Please feel free to contact us for more details.

Main Properties:

- Crystal Structure: MgAl2O4 exhibits a cubic crystal system, offering excellent crystal quality and thermal stability.

- Refractory Properties: The material has a high melting point and good resistance to heat, making it suitable for high-temperature applications.

- Electrical Properties: Magnesium aluminate demonstrates good electrical insulation, making it ideal for use in electrical and electronic devices.

Applications:

1. Ceramic Materials: Used in the production of high-temperature ceramics and refractory materials, enhancing strength and thermal resistance.

2. Catalyst Support: Acts as a support for catalysts in chemical reactions, improving catalytic efficiency.

3. Electronic Components: Serves as a dielectric material in electronic devices, enhancing their electrical performance.

4. Semiconductor Applications: Magnesium aluminate is used as a substrate for certain semiconductor materials, providing a favorable environment for crystal growth. Due to its high thermal stability and good insulating properties, MgAl₂O₄ performs excellently in high-temperature semiconductor devices. It is also utilized in the manufacture of high-frequency microwave devices, improving overall performance.

Main performance parameters

Crystal growth method

CZ

Crystal structure

Cube

Lattice constant

a=8.085Å

Melting point(℃)

2130℃

Density(g/cm3)

3.64g/cm3

Hardness

8 (mohs)

Color

White transparent

Coefficient of thermal expansion

7.45×10-6 /℃

Size

10x3,10x5,10x10,15x15,,20x15,20x20,

Ф1″,Ф2″,

Thickness

0.5mm,1.0mm

Polishing

Single-sided or double-sided

Crystal orientation

<100>、<110>、<111>±0.5º

Crystal plane orientation accuracy

±0.5°

Edge orientation accuracy

2°(Special requirements can reach within 1°)

Bevel wafer

According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed

Ra:

≤5Å(5µm×5µm)

Package

Class 100 clean bag, Class 1000 super clean room

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