C-Axis Miscut Sapphire Substrates 1-6° on Alumina Crystal Base for Epitaxial Growth of TMDs, Graphene, and Diamond

Product Specifications

Material: >99.99% High-Purity Aluminum Oxide Crystal (Fused Method)

Crystal Orientation:

- C-plane (0001) (Standard Sapphire Substrate)

- C-axis A-axis tilt: 0.5-6 degrees

- C-axis M-axis tilt: 0.5-6 degrees (Misaligned Sapphire Substrate)

- A-plane (11-20)

- M-plane (1-100)

- R-plane (1-102)

Diameter:

- 10x10mm, 15x15mm, 20x20mm (Square)

- 50.8mm (2 inches), 76.2mm (3 inches), 100mm (4 inches), 150mm (6 inches), 200mm (8 inches)

- 104mm (4 inches variable wafer size), 159mm (6 inches variable wafer size)

Thickness:

- 150μm / 300μm / 400μm / 430μm (2 inches standard thickness)

- 500μm / 650μm (4 inches standard thickness) / 1000μm (6 inches standard thickness)

- Various thickness options available; please contact customer service for confirmation.

Polishing: Single-side Polished / Double-side Polished (Optional)

CMP Polished Surface Roughness: Epi-ready Ra <0.3nm

Total Thickness Variation (TTV): <10μm

Bow: Refer to specification sheet

Warp: Refer to specification sheet

Packaging: 25 pieces/box, multi-piece box packaging, vacuum-sealed in double-layer PE bags.

*For specific specifications, please request the product specification sheet from customer service.*

Office Photo

Exhibition