High Vacuum RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells

Product Name: High Vacuum RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells

Product Model: OTF-1200X-4-RTP-HV

Product Description: The 4" High Vacuum RTP Furnace OTF-1200X-4-RTP-HV is a compact rapid thermal processing tube furnace equipped with a 4" quartz tube and a high vacuum system (mechanical pump + molecular pump). It is specifically designed for the annealing of semiconductor or solar cell wafers (max 3").

Product Description

The 4" High Vacuum RTP Tube Furnace OTF-1200X-4-RTP-HV is a compact rapid thermal processing tube furnace equipped with a 4" quartz tube and a high vacuum system (mechanical pump + molecular pump). It is specifically designed for the annealing of semiconductor or solar cell wafers (max 3"). This machine uses a 10 kW infrared lamp for heating, with a maximum heating rate of 50°C/s and 30 segments of temperature control, with an accuracy of ±1°C. Additionally, real-time control and temperature curve display can be achieved on a computer via an RS485 port and control software.

Product Features

1. The quartz sample holder is fixed on a sliding flange, making sample loading easier.

2. A 76mm AlN substrate is placed on the sample holder to support the samples that need annealing. AlN has high thermal conductivity, providing excellent temperature uniformity (±5°C) in the sample placement area.

3. An embedded thermocouple ensures accurate temperature measurement.

4. PID automatic temperature control is employed with a 30-segment program, featuring overheat and disconnection protection.

5. CE certified.

Product Parameters

Product Name

High Vacuum RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells

Product Model

OTF-1200X-4-RTP-HV

Installation

Requirements

This equipment is required to operate under the following conditions: temperature 25°C ± 15°C, humidity 55% Rh ± 10% Rh.

1. Water: The equipment is equipped with a self-circulating cooling water machine (fill with purified water or deionized water).

2. Electricity: AC 380V 50Hz (63A air switch), with a good grounding required.

3. Gas: The equipment chamber needs to be filled with argon gas (purity of 99.99% or higher); an argon gas cylinder must be provided (with a Ø6mm double ferrule connector).

4. Worktable: Dimensions of 1500mm × 600mm × 700mm, with a load capacity of over 200kg.

5. Ventilation System: Required.

Main

Parameters

1. Power Supply: Furnace body single-phase 208V-240V, 50Hz/60Hz, 10KW;

High vacuum system AC 110V/220V switchable, 50Hz/60Hz, 110W.

2. Furnace Structure: Double-layer mullite steel construction.

3. Quartz Tube: Outer diameter Ø110mm, inner diameter Ø103mm, length 380mm.

4. Sample Holder: 76mm.

5. Heating Elements: 8 infrared lamp tubes, filament length 200mm, filament diameter Ø10mm, lamp length 300mm.

6. Heating Zone: 102mm × 305mm, uniformity ±5°C.

7. Thermocouple: K-type thermocouple.