RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells

Product Name: RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells

Product Model: RTP-1000-LV3F

Product Description: The RTP Tube Furnace RTP-1000-LV3F with three-channel flow mixing is specifically designed for annealing semiconductor wafers, solar cells, and other samples (up to 3 inches). It is equipped with three flow meters and a mechanical pump. This machine uses 9 kW infrared lamps for heating, with a maximum heating rate of 100°C/s. It also features an RS485 interface, allowing operation control and temperature curve display via software on a computer.

Product Description

The RTP Tube Furnace RTP-1000-LV3F with three-channel flow mixing is specifically designed for annealing semiconductor wafers, solar cells, and other samples (up to 3 inches). It is equipped with three flow meters and a mechanical pump. This machine uses 9 kW infrared lamps for heating, with a maximum heating rate of 100°C/s. It also features an RS485 interface, allowing operation control and temperature curve display via software on a computer.

Product Features

1. Double-layer Al₂O₃ fiber steel structure, no water cooling or air cooling required.

2. The inner chamber surface is coated with imported high-temperature aluminum oxide coating, which enhances heating efficiency and extends the instrument's lifespan.

3. PID controller, capable of setting 30 segments for heating and cooling programs, with overheat protection and disconnection functions.

4. CE certified.

Product Parameters

Product Name	RTP Tube Furnace for Annealing Semiconductor Wafers and Solar Cells
Product Model	RTP-1000-LV3F
Installation Requirements	This equipment is required to operate under the following conditions: temperature 25°C ± 15°C, humidity 55% Rh ± 10% Rh. 1. Water: The equipment is equipped with a self-circulating cooling water machine (fill with purified water or deionized water). 2. Electricity: AC 380V 50Hz (63A air switch), with a good grounding required. 3. Gas: The equipment chamber needs to be filled with argon gas (purity of 99.99% or higher); an argon gas cylinder must be provided (with a Ø6mm double ferrule connector). 4. Worktable: Dimensions of 1500mm × 600mm × 700mm, with a load capacity of over 200kg. 5. Ventilation System: Required.
Main Parameters	1. Power Supply: Single-phase 208V-240V AC, 50Hz/60Hz, 9KW 2. Quartz Tube: Outer diameter Ø110mm, inner diameter Ø103mm, length 380mm 3. Heating Element: Infrared lamp tube, diameter Ø10mm, length 300mm 4. Heating Zone: 300mm 5. Operating Temperature: Max temperature 1100℃ 6. Temperature Control Accuracy: ±0.5℃ 7. Max Heating Rate: 50℃/s from RT to 800℃, 10℃/s from 800℃ to 1000℃ 8. Temperature Controller: Silicon Controlled Rectifier (SCR) PID automatic control 9. Vacuum Flange: Stainless steel, with water cooling interface and needle valve, double-layer high-temperature O-ring sealing; must use water cooling for operation at >900℃, with a circulation water flow rate of 0.5m³/hr 10. Vacuum Level: 10⁻³ torr 11. Flow Meters: 3 units, range 40cc/min-400cc/min, accuracy 4% FS
Product specifications	Dimensions: Furnace body 760mm × 330mm × 530mm, Vacuum mixing system: 600mm × 600mm × 597mm; Weight: 45kg
Optional Accessories	Corrosion-resistant Digital Vacuum Gauge