1200C Tube Furnace with Internal Travel Mechanism For HPCVD

OTF-1200X-S-HPCVD

Split Tube Furnace 

• 208 - 240 VAC, 50/60Hz,  1.2 KW max. power consumption

• Working temperature:  1100°C continuous and 1200°C Max.

• 2" quartz tube (50mm O.D x 44mm I.D x 450mm L)  with vacuum-sealed flanges.

• Optional:  you may choose a dual-zone tube furnace at Pic below right at extra cost to create a higher thermal gradient or longer constant temperature zone

Temperature Control

• PID automatic control via solid-state relay with 30 steps programmable

• Built-in Over Temperature and Thermocouple Failure Protection

• +/-1°C accuracy

• K-type thermal couple

• Heating zone  Length:  200mm  ( 8")

• Constant temperature zone: 60 mm   (+/-1°C @ 1000 °C )

Vacuum Sealing

• 2" quick clamp flange with 1/4'' fittings, vacuum gauge as well as needle valve on the right side.

• The right flange is connected to a stainless steel bellow which is stretchable up to 150 mm.

• Left flange with quick-clamped KF25 vacuum port and 1/4'' barb venting valve.

• Max. Vacuum level:  10E-2 torr by mechanical pump and 10-E5 by turbopump.

Internal Traveling Mechanism 

& PLC Control Panel

• One 1/4" Dia. x 24'' long K-type thermal couple is inserted through the right flange to support a  mini-crucible boat in the chamber. 

• A step motor  ( 24VDC, 100W) drives the crucible inside the tube from the heating center to the right end of the furnace, L100 mm max. with air-tight

• Touch screen panel allows control of travel distance and temperature display of crucible position.

• Traveling speed is constant at 180mm/ min. ( variable speed control is available upon request at additional cost )

• A 50x20x20mm mini-crucible boat (~20ml) is installed on a thermal couple.

• AIN Sample Holder or Graphite Flat Substrate Holder for the wafer is available upon request, additional customization fee will apply.

Max. Heating & Cooling Rate

The max heating and cooling rate can be achieved by moving the sample into the pre-heated hot zone and moving the sample out from the hot zone.  The typical ramp/cool rate is listed in below:

Heating Rate:

 10°C/sec (150°C - 250°C);

  7°C/sec (250°C - 350°C);

  4°C/sec (350°C - 500°C);

  3°C/sec (500°C - 550°C);

  2°C/sec (550°C - 650°C);

  1°C/sec (650°C - 800°C);

  0.5°C/sec (800°C - 1000°C);

Cooling Rate:

10°C/sec (950°C - 900°C);

7°C/sec (900°C - 850°C);

4°C/sec (850°C - 750°C);

2°C/sec (750°C - 600°C);

1.5°C/sec (600°C - 500°C);

1°C/sec (500°C - 400°C);

0.5°C/sec (400°C - 300°C);

Application Notes

This multi-functional furnace is suitable for the applications in below:

RTE:  Crucible loaded with evaporation material is placed in the center of the furnace, and moves sample holder to a downstream position with the appropriate temperature where the deposition takes place.

HPCVD： Similar setup as RTE, we also introduce reactant gas to mix with evaporation vapor and make a deposition

Horizontal Bridgman Crystal Growth：  Load material and seed into a crucible and place it in the center of the furnace. Move the crucible at the desired speed to grow a single crystal under a suitable thermal gradient.

If you have any questions or suggestions, please contact us before purchasing

After CVD, the graphene must be transferred from the metal catalyst to another substrate for most applications. By using the graphene transfer tape, the residue can be low

For Horizontal directional crystalization  (HDC), you may use a gas feedthrough as in the pic below：

Dimensions: 

One-year limited manufacturer's warranty (Consumable parts such as processing tubes, O-rings and heating elements are not covered by the warranty, please order replacements at related products).