Advanced Single-Chamber Parallel Plate Capacitive PECVD System for Plasma-Enhanced Thin Film Deposition

Product Name: Parallel Plate Capacitive PECVD System

Product Description: The Parallel Plate Capacitive PECVD is a technology that uses plasma to activate reactive gases, promoting chemical reactions at the substrate surface or near-surface region to generate solid films.

This system is a single-chamber plasma-enhanced chemical vapor deposition (PECVD) development tool designed for growing nanowires or fabricating various films using CVD methods, serving as a new exploratory instrument.

Product Description

The basic principle of plasma chemical vapor deposition (PECVD) technology is that, under the influence of high-frequency or DC electric fields, the source gas is ionized to form plasma.

This low-temperature plasma serves as an energy source, allowing an appropriate amount of reactive gas to be introduced. By utilizing plasma discharge, the reactive gas is activated to achieve chemical vapor deposition.

Product Features

1. The system features a single-chamber structure with a manual front-opening door.

2. Thin film deposition is conducted in a high vacuum environment.

3. The chamber is constructed from stainless steel.

4. The sample stage is rotatable.

Product Parameters

Product Name

Single-Chamber Parallel Plate Capacitive PECVD System for Plasma-Enhanced Thin Film Deposition

Installation

Requirements

1. Ambient Temperature: 10℃ to 35℃

2. Relative Humidity: No more than 75%

3. Power Supply: 220V, single-phase, 50±0.5 Hz

4. Equipment Power: Less than 4KW

5. Water Supply: Water pressure 0.2MPa to 0.4MPa, water temperature 15℃ to 25℃

6. The surrounding environment of the equipment should be clean, with clean air, and should not contain dust or gases that could cause corrosion of electrical components or metal surfaces, or lead to electrical conductivity between metals.

Main

Parameters

1. The system features a single-chamber cylindrical structure with a manual front-opening door.

2. All components of the vacuum chamber and accompanying parts are made from high-quality stainless steel (304), argon arc welded, with a surface treated using glass bead blasting and electrochemical polishing. It includes a visible observation window with a shutter, and the vacuum chamber dimensions are Φ300mm × 300mm.

3. Ultimate Vacuum: 8.0 × 10^-5 Pa (achieved using a 600L/S molecular pump after outgassing, with a 4L/S backing pump);

- System vacuum leak rate: ≤5.0 × 10^-7 Pa·L/S;

- The system can achieve a vacuum of 8.0 × 10^-4 Pa from atmospheric pressure in 40 minutes; after stopping the pump for 12 hours, the vacuum level is ≤20 Pa.

4. The system uses a capacitive coupling method for gas introduction, with the sample positioned below and the spray head above.

5. Maximum sample heating temperature: 500℃, with temperature control accuracy of ±1°C, using a temperature control meter for regulation.

6. Spray head dimensions: Φ90mm, with an adjustable electrode gap between the spray head and the sample of 15-50mm (continuously adjustable online based on process requirements), equipped with a graduated index display.

7. Working deposition vacuum: 13.3-133 Pa (adjustable based on process requirements).

8. RF Power Supply: Frequency 13.56 MHz, with a maximum power of 300W and fully automatic matching.

9. Types of gases (to be provided by the user); standard configuration includes two 100 SCCM mass flow controllers, with the option for users to modify gas line configurations based on process needs.

10. Exhaust gas treatment system (to be provided by the user).

Product

specifications

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